Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Wei-Sheng Liu0
Jen-Inn Chyi0
Date of Patent
November 25, 2008
0Patent Application Number
115009350
Date Filed
August 9, 2006
0Patent Primary Examiner
Patent abstract
A quantum dot optoelectronic device has an overgrown layer containing antimony (Sb). The optical characteristics and thermal stability of the optoelectronic device are thus greatly enhanced due to the improved crystal quality and carrier confinement of the quantum dot structure.
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