US Patent 7456423 Quantum dot optoelectronic device having an Sb-containing overgrown layer
Patent 7456423 was granted and assigned to National Central University on November, 2008 by the United States Patent and Trademark Office.
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Patent Inventor Names
Jen-Inn Chyi0
Wei-Sheng Liu0
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Patent abstract
A quantum dot optoelectronic device has an overgrown layer containing antimony (Sb). The optical characteristics and thermal stability of the optoelectronic device are thus greatly enhanced due to the improved crystal quality and carrier confinement of the quantum dot structure.
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US Patent 07456423 Quantum dot optoelectronic device having an Sb-containing overgrown layer US Patent 7456423 Quantum dot optoelectronic device having an Sb-containing overgrown layer
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Patent Number
074564230
Patent Number
74564230
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Current Assignee
Patent Jurisdiction
Patent Number
074564230
Date of Patent
November 25, 2008
0Patent Application Number
115009350
Date Filed
August 9, 2006
0Official Website
Patent Primary Examiner
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US Patent 07456423 Quantum dot optoelectronic device having an Sb-containing overgrown layer
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07456423
Date of patent
November 25, 2008
Patent application number
11500935
Date Filed
August 9, 2006
Patent primary examiner
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