Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
November 25, 2008
Patent Application Number
11532207
Date Filed
September 15, 2006
Patent Citations Received
Patent Primary Examiner
Patent abstract
Therefore, disclosed above are embodiments of a multi-fin field effect transistor structure (e.g., a multi-fin dual-gate FET or tri-gate FET) that provides low resistance strapping of the source/drain regions of the fins, while also maintaining low capacitance to the gate by raising the level of the straps above the level of the gate. Embodiments of the structure of the invention incorporate either conductive vias or taller source/drain regions in order to electrically connect the source/drain straps to the source/drain regions of each fin. Also, disclosed are embodiments of associated methods of forming these structures.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.