Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Kimmo Mylly0
Date of Patent
December 16, 2008
0Patent Application Number
109620640
Date Filed
October 7, 2004
0Patent Primary Examiner
Patent abstract
A high voltage up to 20V is usually applied to a NAND flash memory device for programming or easing a memory section. The programming/easing voltage must reach that high voltage state when the R/B signal is in the L state to start the actual cell programming or erasing. To improve the programming or erasing efficiency, the applied voltage also reaches the high voltage state before the R/B signal is set from H to L. The memory device may have one connecting pad to receive a normal operating voltage and another connection pad to receive the programming and erasing voltage. The EXT_CSD register may have a mode bit to indicate whether the memory device supports the programming and erasing operation.
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