Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yoshihiro Takao0
Date of Patent
December 30, 2008
0Patent Application Number
114118880
Date Filed
April 27, 2006
0Patent Primary Examiner
Patent abstract
In each of a p-channel MOS transistor and an n-channel MOS transistor, a channel direction is set in the <100> direction and a first stressor film accumulating therein a tensile stress is formed in a STI device isolation structure. Further, a second stressor film accumulating therein a tensile stress is formed on a silicon substrate so as to cover the device isolation structure.
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