Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yeong Sil Kim0
Date of Patent
January 27, 2009
0Patent Application Number
110238450
Date Filed
December 27, 2004
0Patent Primary Examiner
Patent abstract
Provided is a semiconductor device capable of reducing the resistance of the gate electrode of a transistor. The semiconductor device comprises a semiconductor substrate, a gate oxide film formed on the substrate, a gate formed on the gate oxide film, and a metal silicide layer formed on the top surface and the upper side surface of the gate.
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