US Patent 7482256 Semiconductor device and method of manufacturing the same
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Patent Inventor Names
Yeong Sil Kim0
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Patent abstract
Provided is a semiconductor device capable of reducing the resistance of the gate electrode of a transistor. The semiconductor device comprises a semiconductor substrate, a gate oxide film formed on the substrate, a gate formed on the gate oxide film, and a metal silicide layer formed on the top surface and the upper side surface of the gate.
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US Patent 07482256 Semiconductor device and method of manufacturing the same US Patent 7482256 Semiconductor device and method of manufacturing the same
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Patent Number
074822560
Patent Number
74822560
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Patent Number
074822560
Date of Patent
January 27, 2009
0Patent Application Number
110238450
Date Filed
December 27, 2004
0Official Website
Patent Primary Examiner
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US Patent 07482256 Semiconductor device and method of manufacturing the same
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Is a
Patent jurisdiction
Patent number
07482256
Date of patent
January 27, 2009
Patent application number
11023845
Date Filed
December 27, 2004
Patent primary examiner
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