US Patent 7494902 Method of fabricating a strained multi-gate transistor
Patent 7494902 was granted and assigned to IMEC on February, 2009 by the United States Patent and Trademark Office.
Name
# Contributions
Last Contribution
Find more entities like US Patent 7494902 Method of fabricating a strained multi-gate transistor
Use the Golden Query Tool to find similar entities by any field in the Knowledge Graph, including industry, location, and more.
