Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Young-jin Cho0
Yo-sep Min0
Date of Patent
March 10, 2009
0Patent Application Number
109532670
Date Filed
September 30, 2004
0Patent Primary Examiner
Patent abstract
An amorphous dielectric film for use in a semiconductor device, such as a DRAM, and a method of manufacturing the amorphous dielectric film, includes bismuth (Bi), titanium (Ti), silicon (Si), and oxide (O). The amorphous dielectric film may have a dielectric constant of approximately 60 or higher. The amorphous dielectric film may be expressed by the chemical formula Bi1-x-yTixSiyOz, where 0.2<x<0.5, 0<y<0.5, and 1.5 <z<2.
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