US Patent 7501191 Amorphous dielectric thin film and manufacturing method thereof
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Yo-sep Min0
Young-jin Cho0
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Patent abstract
An amorphous dielectric film for use in a semiconductor device, such as a DRAM, and a method of manufacturing the amorphous dielectric film, includes bismuth (Bi), titanium (Ti), silicon (Si), and oxide (O). The amorphous dielectric film may have a dielectric constant of approximately 60 or higher. The amorphous dielectric film may be expressed by the chemical formula Bi1-x-yTixSiyOz, where 0.2<x<0.5, 0<y<0.5, and 1.5 <z<2.
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US Patent 07501191 Amorphous dielectric thin film and manufacturing method thereof US Patent 7501191 Amorphous dielectric thin film and manufacturing method thereof
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Patent Number
075011910
Patent Number
75011910
Edits on 26 Sep, 2022
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Patent Jurisdiction
Patent Number
075011910
Date of Patent
March 10, 2009
0Patent Application Number
109532670
Date Filed
September 30, 2004
0Official Website
Patent Primary Examiner
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US Patent 07501191 Amorphous dielectric thin film and manufacturing method thereof
Infobox
Is a
Patent jurisdiction
Patent number
07501191
Date of patent
March 10, 2009
Patent application number
10953267
Date Filed
September 30, 2004
Patent primary examiner
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