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US Patent 7504182 Photolithography mask repair

Patent 7504182 was granted and assigned to FEI Company on March, 2009 by the United States Patent and Trademark Office.

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Patent
Patent
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Patent attributes

Current Assignee
FEI Company
FEI Company
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
75041820
Patent Inventor Names
Diane K. Stewart0
Steven Berger0
Christian R. Musil0
John Beaty0
Date of Patent
March 17, 2009
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Patent Application Number
106642470
Date Filed
September 17, 2003
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Patent Citations Received
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US Patent 11704463 Method of etch model calibration using optical scatterometry
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US Patent 11921433 Optical metrology in machine learning to characterize features
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Patent Primary Examiner
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Stephen Rosasco
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Patent abstract

Masks can be repaired by creating a structure that is different from the original design, but that produces the same aerial image. For example, missing opaque material can be replaced by implanting gallium atoms to reduce transmission and quartz can be etched to an appropriate depth to produce the proper phase. In another aspect, a laser or other means can be used to remove an area of a mask around a defect, and then mask structures, either the intended design structures or alternate structures that produce the same aerial image, can be constructed using charged particle beam deposition and etching. For example, an electron beam can be used to deposit quartz to alter the phase of transmitted light. An electron beam can also be used with a gas to etch quartz to remove a layer including implanted gallium atoms. Gallium staining can also be reduced or eliminated by providing a sacrificial layer that can be removed, along with the implanted gallium atoms, using, for example, a broad ion beam. In another aspect, a charged particle beam can be programmed to etch a defect using three-dimensional information derived from two charged particle beams images of the defect from different angle.

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