Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
March 24, 2009
Patent Application Number
11385999
Date Filed
March 22, 2006
Patent Primary Examiner
Patent abstract
A semiconductor device comprising a substrate and a ferroelectric capacitor formed on the substrate. The ferroelectric capacitor includes a lower electrode, an upper electrode and a ferroelectric film interposed between the lower and upper electrodes. The ferroelectric capacitor having sidewalls receded from sidewalls of the upper electrode.
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