US Patent 7508020 Semiconductor device and method of manufacturing the same
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Patent abstract
A semiconductor device comprising a substrate and a ferroelectric capacitor formed on the substrate. The ferroelectric capacitor includes a lower electrode, an upper electrode and a ferroelectric film interposed between the lower and upper electrodes. The ferroelectric capacitor having sidewalls receded from sidewalls of the upper electrode.
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US Patent 07508020 Semiconductor device and method of manufacturing the same US Patent 7508020 Semiconductor device and method of manufacturing the same
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Patent Number
0750802000
Patent Number
750802000
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Patent Jurisdiction
Patent Number
075080200
Date of Patent
March 24, 2009
0Patent Application Number
113859990
Date Filed
March 22, 2006
0Official Website
Patent Primary Examiner
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Infobox
Is a
Patent Jurisdiction
Patent Number
075080200
Date of Patent
March 24, 2009
0Patent Application Number
113859990
Date Filed
March 22, 2006
0Official Website
Patent Primary Examiner
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US Patent 07508020 Semiconductor device and method of manufacturing the same
Infobox
Is a
Patent jurisdiction
Patent number
07508020
Date of patent
March 24, 2009
Patent application number
11385999
Date Filed
March 22, 2006
Patent primary examiner
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