Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
John W. Krawczyk0
Andrew L. McNees0
Date of Patent
April 28, 2009
0Patent Application Number
110268390
Date Filed
December 30, 2004
0Patent Primary Examiner
Patent abstract
Methods of forming a fluid channel in a semiconductor substrate may include applying a material layer to at least one surface of the semiconductor substrate. The method may further include manipulating the material layer to form a surface topography corresponding to a channel, the surface topography being configured to control directionality of ion bombardment of said substrate along electromagnetic field lines in a plasma sheath coupled to said surface topography.
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