Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yuguo Wang0
Robert C. Bowen0
Date of Patent
May 19, 2009
Patent Application Number
11828961
Date Filed
July 26, 2007
Patent Primary Examiner
Patent abstract
In the present invention, a PMOS device comprises a channel region formed in {100} silicon with first and second source/drain region disposed on either side of the channel region. The channel region is oriented such that a current flow between the source/drain regions has a <100> direction through the channel region. Dielectric regions create a compressive stress on the channel region perpendicular to the current flow.
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