US Patent 7534676 Method of forming enhanced device via transverse stress
Patent 7534676 was granted and assigned to Texas Instruments on May, 2009 by the United States Patent and Trademark Office.
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Patent Inventor Names
Robert C. Bowen0
Yuguo Wang0
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Patent abstract
In the present invention, a PMOS device comprises a channel region formed in {100} silicon with first and second source/drain region disposed on either side of the channel region. The channel region is oriented such that a current flow between the source/drain regions has a <100> direction through the channel region. Dielectric regions create a compressive stress on the channel region perpendicular to the current flow.
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US Patent 07534676 Method of forming enhanced device via transverse stress US Patent 7534676 Method of forming enhanced device via transverse stress
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Patent Number
07534676
Patent Number
7534676
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Official Website
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US Patent 07534676 Method of forming enhanced device via transverse stress
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Is a
Current assignee
Patent jurisdiction
Patent number
07534676
Date of patent
May 19, 2009
Patent application number
11828961
Date Filed
July 26, 2007
Patent primary examiner
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