US Patent 7535046 Dielectric memory and manufacturing method thereof
Patent 7535046 was granted and assigned to Panasonic on May, 2009 by the United States Patent and Trademark Office.
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Patent abstract
As an oxygen diffusion prevention layer, a multilayer film formed by a metal nitride and a noble metal element. As an interlayer insulation film on the oxygen diffusion prevention layer, a plasma CVD oxide film is used. Moreover, as an interlayer insulation film on a capacitor, an ozone TEOS film is used.
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US Patent 07535046 Dielectric memory and manufacturing method thereof US Patent 7535046 Dielectric memory and manufacturing method thereof
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Patent Number
0753504600
Patent Number
753504600
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
075350460
Date of Patent
May 19, 2009
0Patent Application Number
117080330
Date Filed
February 20, 2007
0Official Website
Patent Primary Examiner
Edits on 23 Sep, 2022
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
075350460
Date of Patent
May 19, 2009
0Patent Application Number
117080330
Date Filed
February 20, 2007
0Official Website
Patent Primary Examiner
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US Patent 07535046 Dielectric memory and manufacturing method thereof
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07535046
Date of patent
May 19, 2009
Patent application number
11708033
Date Filed
February 20, 2007
Patent primary examiner
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