Is a
Patent attributes
Current Assignee
0
Patent Jurisdiction
Patent Number
Patent Inventor Names
Satoshi Kume0
Masahiko Higashi0
Takahiro Maruyama0
Shinichi Yamanari0
Itaru Kanno0
Jiro Yugami0
Date of Patent
May 26, 2009
0Patent Application Number
115518610
Date Filed
October 23, 2006
0Patent Primary Examiner
Patent abstract
In a semiconductor device manufacturing method of the invention, a metal film, for forming a gate electrode, is formed on a gate insulating film. Subsequently, when the metal film is processed, part of the metal film is removed by a wet etching process using a given chemical liquid.
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