US Patent 7537987 Semiconductor device manufacturing method
Patent 7537987 was granted and assigned to Renesas Technology Corp on May, 2009 by the United States Patent and Trademark Office.
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Patent Inventor Names
Itaru Kanno0
Jiro Yugami0
Masahiko Higashi0
Satoshi Kume0
Shinichi Yamanari0
Takahiro Maruyama0
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Patent abstract
In a semiconductor device manufacturing method of the invention, a metal film, for forming a gate electrode, is formed on a gate insulating film. Subsequently, when the metal film is processed, part of the metal film is removed by a wet etching process using a given chemical liquid.
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US Patent 07537987 Semiconductor device manufacturing method US Patent 7537987 Semiconductor device manufacturing method
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Patent Number
075379870
Patent Number
75379870
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Official Website
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Is a
Current Assignee
0
Patent Jurisdiction
Patent Number
075379870
Date of Patent
May 26, 2009
0Patent Application Number
115518610
Date Filed
October 23, 2006
0Official Website
Patent Primary Examiner
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US Patent 07537987 Semiconductor device manufacturing method
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07537987
Date of patent
May 26, 2009
Patent application number
11551861
Date Filed
October 23, 2006
Patent primary examiner
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