US Patent 7542253 Silicon controlled rectifier for the electrostatic discharge protection

Patent 7542253 was granted and assigned to National Chiao Tung University on June, 2009 by the United States Patent and Trademark Office.

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Patent

Patent attributes

Current Assignee

National Chiao Tung University

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

7542253

Patent Inventor Names

Kun-Hsien Lin0

Ming-Dou Ker0

Date of Patent

June 2, 2009

Patent Application Number

10857836

Date Filed

June 2, 2004

Patent Citations Received

‌

US Patent 11961834 Semiconductor device having multiple electrostatic discharge (ESD) paths

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US Patent 11929363 Semiconductor device having multiple electrostatic discharge (ESD) paths

Patent Primary Examiner

Stephen W. Jackson

Patent abstract

The present invention relates to an SCR (Silicon Controlled Rectifier) for the ESD (electrostatic discharge) protection comprising two terminal electrodes of a first electrode and a second electrode, a PMOS, an NMOS and an SCR structure. By utilizing an embedded SCR, a whole-chip ESD protection circuit design can be obtained. The present invention is suitable for IC products, and for applications by IC design industries and IC foundry industries.

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