US Patent 7542253 Silicon controlled rectifier for the electrostatic discharge protection

Patent 7542253 was granted and assigned to National Chiao Tung University on June, 2009 by the United States Patent and Trademark Office.

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Patent Citations Received

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US Patent 11961834 Semiconductor device having multiple electrostatic discharge (ESD) paths

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US Patent 11929363 Semiconductor device having multiple electrostatic discharge (ESD) paths

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Patent Inventor Names

Kun-Hsien Lin0

Ming-Dou Ker0

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Patent abstract

The present invention relates to an SCR (Silicon Controlled Rectifier) for the ESD (electrostatic discharge) protection comprising two terminal electrodes of a first electrode and a second electrode, a PMOS, an NMOS and an SCR structure. By utilizing an embedded SCR, a whole-chip ESD protection circuit design can be obtained. The present invention is suitable for IC products, and for applications by IC design industries and IC foundry industries.

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Official Website

https://pdfpiw.uspto.gov/.piw?Docid=07542253

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