US Patent 7560310 Semiconductor constructions and semiconductor device fabrication methods

A method of fabricating a semiconductor device includes etching a substrate formed on a backside of a semiconductor wafer to form a recess in the substrate, and forming a sputter film in the recess, the sputter film including a first material having a coefficient of thermal expansion (CTE) which is at least substantially equal to a CTE of the substrate, and a second material having a thermal conductivity which is greater than a thermal conductivity of the substrate.