US Patent 7563715 Method of producing thin films
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Patent Inventor Names
Hannu Huotari0
Suvi Haukka0
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Patent abstract
A process for producing metal nitride thin films comprising doping the metal nitride thin films by atomic layer deposition (ALD) with silicon or boron or a combination thereof. The work function of metal nitride thin films, which are used in metal electrode applications, can efficiently be tuned.
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US Patent 07563715 Method of producing thin films US Patent 7563715 Method of producing thin films
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Patent Number
075637150
Patent Number
75637150
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Patent Jurisdiction
Patent Number
075637150
Date of Patent
July 21, 2009
0Patent Application Number
112948430
Date Filed
December 5, 2005
0Official Website
Patent Primary Examiner
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US Patent 07563715 Method of producing thin films
Infobox
Is a
Patent jurisdiction
Patent number
07563715
Date of patent
July 21, 2009
Patent application number
11294843
Date Filed
December 5, 2005
Patent primary examiner
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