Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Jong-Hyon Ahn0
Jin Hua Liu0
Date of Patent
August 4, 2009
0Patent Application Number
118783510
Date Filed
July 24, 2007
0Patent Primary Examiner
Patent abstract
In a method of fabricating a semiconductor device, a first mask pattern is formed on a substrate. The first mask pattern has a first opening formed to expose the substrate. An oxidation barrier region is formed in the substrate exposed by the first opening, and the first mask pattern is patterned to form a second mask pattern having a second opening. A gate insulation layer is formed on the substrate exposed by the second opening. The gate insulation layer has a variable thickness.
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