US Patent 7569480 Semiconductor devices and methods of fabricating the same
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Patent Inventor Names
Jin Hua Liu0
Jong-Hyon Ahn0
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Patent abstract
In a method of fabricating a semiconductor device, a first mask pattern is formed on a substrate. The first mask pattern has a first opening formed to expose the substrate. An oxidation barrier region is formed in the substrate exposed by the first opening, and the first mask pattern is patterned to form a second mask pattern having a second opening. A gate insulation layer is formed on the substrate exposed by the second opening. The gate insulation layer has a variable thickness.
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US Patent 07569480 Semiconductor devices and methods of fabricating the same US Patent 7569480 Semiconductor devices and methods of fabricating the same
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Patent Number
075694800
Patent Number
75694800
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Patent Jurisdiction
Patent Number
075694800
Date of Patent
August 4, 2009
0Patent Application Number
118783510
Date Filed
July 24, 2007
0Official Website
Patent Primary Examiner
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US Patent 07569480 Semiconductor devices and methods of fabricating the same
Infobox
Is a
Patent jurisdiction
Patent number
07569480
Date of patent
August 4, 2009
Patent application number
11878351
Date Filed
July 24, 2007
Patent primary examiner
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