Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yoku Inoue0
Hidenori Mimura0
Shingo Sakakibara0
Date of Patent
October 20, 2009
0Patent Application Number
110771290
Date Filed
March 11, 2005
0Patent Primary Examiner
Patent abstract
A heteroepitaxial growth method for gallium nitride yields gallium nitride which contains good quality fine crystals and has excellent optical properties, on a quartz substrate or a silicon substrate. The method comprises a step A of nitriding the surface of the substrate, and a step B of depositing or vapor depositing at least one atom layer of gallium.
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