US Patent 7604697 Heteroepitaxial growth method for gallium nitride
Patent 7604697 was granted and assigned to Yamaha (yacht) on October, 2009 by the United States Patent and Trademark Office.
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Patent Inventor Names
Hidenori Mimura0
Shingo Sakakibara0
Yoku Inoue0
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Patent abstract
A heteroepitaxial growth method for gallium nitride yields gallium nitride which contains good quality fine crystals and has excellent optical properties, on a quartz substrate or a silicon substrate. The method comprises a step A of nitriding the surface of the substrate, and a step B of depositing or vapor depositing at least one atom layer of gallium.
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US Patent 07604697 Heteroepitaxial growth method for gallium nitride US Patent 7604697 Heteroepitaxial growth method for gallium nitride
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Patent Number
076046970
Patent Number
76046970
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Current Assignee
Patent Jurisdiction
Patent Number
076046970
Date of Patent
October 20, 2009
0Patent Application Number
110771290
Date Filed
March 11, 2005
0Official Website
Patent Primary Examiner
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US Patent 07604697 Heteroepitaxial growth method for gallium nitride
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07604697
Date of patent
October 20, 2009
Patent application number
11077129
Date Filed
March 11, 2005
Patent primary examiner
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