Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Seong-Yeol Mun0
Kyoung-Choul Shin0
Date of Patent
October 20, 2009
0Patent Application Number
112828100
Date Filed
November 18, 2005
0Patent Primary Examiner
Patent abstract
A method for fabricating a semiconductor device is provided. The method includes: loading a wafer into a chamber including a ceramic dome coated with a material having etch tolerance against a plasma; etching a gate structure formed on the wafer, thereby generating etch remnants; and removing the etch remnants by using a gas of SF6 as a main etch gas.
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