US Patent 7604750 Method for fabricating semiconductor device
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Patent Inventor Names
Kyoung-Choul Shin0
Seong-Yeol Mun0
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Patent abstract
A method for fabricating a semiconductor device is provided. The method includes: loading a wafer into a chamber including a ceramic dome coated with a material having etch tolerance against a plasma; etching a gate structure formed on the wafer, thereby generating etch remnants; and removing the etch remnants by using a gas of SF6 as a main etch gas.
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US Patent 07604750 Method for fabricating semiconductor device US Patent 7604750 Method for fabricating semiconductor device
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Patent Number
076047500
Patent Number
76047500
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Patent Jurisdiction
Patent Number
076047500
Date of Patent
October 20, 2009
0Patent Application Number
112828100
Date Filed
November 18, 2005
0Official Website
Patent Primary Examiner
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US Patent 07604750 Method for fabricating semiconductor device
Infobox
Is a
Patent jurisdiction
Patent number
07604750
Date of patent
October 20, 2009
Patent application number
11282810
Date Filed
November 18, 2005
Patent primary examiner
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