US Patent 7635885 Semiconductor device and manufacturing method of the same

Patent 7635885 was granted and assigned to Fujitsu on December, 2009 by the United States Patent and Trademark Office.

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Patent

Patent attributes

Current Assignee

Fujitsu

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

7635885

Date of Patent

December 22, 2009

Patent Application Number

11601807

Date Filed

November 20, 2006

Patent Primary Examiner

‌

Zandra Smith

Patent abstract

An interlayer insulating film (14) covering a ferroelectric capacitor is formed and a contact hole (19) reaching a top electrode (11a) is formed in the interlayer insulating film (14). An Al wiring (17) connected to the top electrode (11a) via the contact hole (19) is formed on the interlayer insulating film (14). A planar shape of the contact hole (19) is an ellipse.

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