US Patent 7635885 Semiconductor device and manufacturing method of the same
Patent 7635885 was granted and assigned to Fujitsu on December, 2009 by the United States Patent and Trademark Office.
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Patent abstract
An interlayer insulating film (14) covering a ferroelectric capacitor is formed and a contact hole (19) reaching a top electrode (11a) is formed in the interlayer insulating film (14). An Al wiring (17) connected to the top electrode (11a) via the contact hole (19) is formed on the interlayer insulating film (14). A planar shape of the contact hole (19) is an ellipse.
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US Patent 07635885 Semiconductor device and manufacturing method of the same US Patent 7635885 Semiconductor device and manufacturing method of the same
Infobox
Patent Number
0763588500
Patent Number
763588500
Edits on 24 Apr, 2023
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
076358850
Date of Patent
December 22, 2009
0Patent Application Number
116018070
Date Filed
November 20, 2006
0Official Website
Patent Primary Examiner
Edits on 23 Sep, 2022
Golden AI
Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
076358850
Date of Patent
December 22, 2009
0Patent Application Number
116018070
Date Filed
November 20, 2006
0Official Website
Patent Primary Examiner
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US Patent 07635885 Semiconductor device and manufacturing method of the same
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07635885
Date of patent
December 22, 2009
Patent application number
11601807
Date Filed
November 20, 2006
Patent primary examiner
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