Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
January 5, 2010
Patent Application Number
11823892
Date Filed
June 29, 2007
Patent Primary Examiner
Patent abstract
In one embodiment of the invention, a non-planar transistor includes a gate electrode and multiple fins. A trench contact is coupled to the fins. The contact bottom is formed above the substrate and does not directly contact the substrate. The contact bottom is higher than the gate top.
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