Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Sang-Il Hwang0
Hyun Ju Lim0
Date of Patent
February 16, 2010
0Patent Application Number
117526250
Date Filed
May 23, 2007
0Patent Primary Examiner
Patent abstract
A method of forming a dual damascene pattern for a metal interconnection by a relatively simple process. Only a portion of an interlayer insulating film is initially etched when forming a via hole. When the interlayer insulating is etched to form a trench, the remaining portion of the via hole may be etched simultaneously.
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