US Patent 7662711 Method of forming dual damascene pattern
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Patent abstract
A method of forming a dual damascene pattern for a metal interconnection by a relatively simple process. Only a portion of an interlayer insulating film is initially etched when forming a via hole. When the interlayer insulating is etched to form a trench, the remaining portion of the via hole may be etched simultaneously.
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Patent Inventor Names
Hyun Ju Lim0
Sang-Il Hwang0
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US Patent 07662711 Method of forming dual damascene pattern US Patent 7662711 Method of forming dual damascene pattern
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Patent Number
076627110
Patent Number
76627110
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Patent Jurisdiction
Patent Number
076627110
Date of Patent
February 16, 2010
0Patent Application Number
117526250
Date Filed
May 23, 2007
0Official Website
Patent Primary Examiner
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US Patent 07662711 Method of forming dual damascene pattern
Infobox
Is a
Patent jurisdiction
Patent number
07662711
Date of patent
February 16, 2010
Patent application number
11752625
Date Filed
May 23, 2007
Patent primary examiner
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