US Patent 7663160 Monolithic photodetector

A photodetector including a photodiode formed in a semiconductor substrate and a waveguide element formed of a block of a high-index material extending above the photodiode in a thick layer of a dielectric superposed to the substrate, the thick layer being at least as a majority formed of silicon oxide and the block being formed of a polymer of the general formula R1R2R3SiOSiR1R2R3 where R1, R2, and R3 are any carbonaceous or metal substituents and where one of R1, R2, or R3 is a carbonaceous substituent having at least four carbon atoms and/or at least one oxygen atom.