Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
February 23, 2010
Patent Application Number
11863442
Date Filed
September 28, 2007
Patent Primary Examiner
Patent abstract
A method for fabricating a semiconductor device is provided. A nickel layer is deposited on a semiconductor substrate and plasma-processed. Rapid thermal processing is performed on the plasma-processed nickel layer to form a nickel silicide layer. The portion of the nickel layer that has not reacted with silicon is then removed.
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