US Patent 7666762 Method for fabricating semiconductor device
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Patent abstract
A method for fabricating a semiconductor device is provided. A nickel layer is deposited on a semiconductor substrate and plasma-processed. Rapid thermal processing is performed on the plasma-processed nickel layer to form a nickel silicide layer. The portion of the nickel layer that has not reacted with silicon is then removed.
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US Patent 07666762 Method for fabricating semiconductor device US Patent 7666762 Method for fabricating semiconductor device
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Patent Number
0766676200
Patent Number
766676200
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Official Website
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Infobox
Is a
Patent Jurisdiction
Patent Number
076667620
Date of Patent
February 23, 2010
0Patent Application Number
118634420
Date Filed
September 28, 2007
0Official Website
Patent Primary Examiner
Edits on 27 Sep, 2022
Golden AI
Infobox
Is a
Patent Jurisdiction
Patent Number
076667620
Date of Patent
February 23, 2010
0Patent Application Number
118634420
Date Filed
September 28, 2007
0Official Website
Patent Primary Examiner
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US Patent 07666762 Method for fabricating semiconductor device
Infobox
Is a
Patent jurisdiction
Patent number
07666762
Date of patent
February 23, 2010
Patent application number
11863442
Date Filed
September 28, 2007
Patent primary examiner
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