Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
March 9, 2010
Patent Application Number
11559690
Date Filed
November 14, 2006
Patent Primary Examiner
Patent abstract
A planar, double-gate transistor structure comprising upper and lower gate stacks that each comprises a single-phase high-K dielectric gate dielectric is disclosed. The transistor structure is particularly suitable for fully-depleted silicon-on-insulator electronics having gate-lengths less than 65 nm.
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