US Patent 7675117 Multi-gate field effect transistor
Patent 7675117 was granted and assigned to Translucent Inc. on March, 2010 by the United States Patent and Trademark Office.
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Patent abstract
A planar, double-gate transistor structure comprising upper and lower gate stacks that each comprises a single-phase high-K dielectric gate dielectric is disclosed. The transistor structure is particularly suitable for fully-depleted silicon-on-insulator electronics having gate-lengths less than 65 nm.
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US Patent 07675117 Multi-gate field effect transistor US Patent 7675117 Multi-gate field effect transistor
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Patent Number
0767511700
Patent Number
767511700
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Official Website
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
076751170
Date of Patent
March 9, 2010
0Patent Application Number
115596900
Date Filed
November 14, 2006
0Official Website
Patent Primary Examiner
Edits on 27 Sep, 2022
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
076751170
Date of Patent
March 9, 2010
0Patent Application Number
115596900
Date Filed
November 14, 2006
0Official Website
Patent Primary Examiner
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US Patent 07675117 Multi-gate field effect transistor
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07675117
Date of patent
March 9, 2010
Patent application number
11559690
Date Filed
November 14, 2006
Patent primary examiner
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