Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Dong-Seon Lee0
Steven P. DenBaars0
Troy J. Baker0
Benjamin A. Haskell0
Hitoshi Sato0
James S. Speck0
John F. Kaeding0
Michael Iza0
...
Date of Patent
April 6, 2010
Patent Application Number
11655573
Date Filed
January 19, 2007
Patent Citations Received
...
Patent Primary Examiner
Patent abstract
A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1−xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1−xN nucleation layer, and cooling the substrate under a nitrogen overpressure.
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