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US Patent 7691658 Method for improved growth of semipolar (Al,In,Ga,B)N

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US Patent 12126143 Method of manufacture for an ultraviolet emitting optoelectronic device
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US Patent 12000552 Laser-based fiber-coupled white light system for a vehicle
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US Patent 11955521 Manufacturable thin film gallium and nitrogen containing devices
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US Patent 11949212 Method for manufacturable large area gallium and nitrogen containing substrate
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US Patent 11884202 Laser-based fiber-coupled white light system
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US Patent 11870495 Intelligent visible light with a gallium and nitrogen containing laser source
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US Patent 11862939 Ultraviolet laser diode device
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US Patent 11841429 Distance detecting systems for use in mobile machine applications
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Patent abstract

A method for improved growth of a semipolar (Al,In,Ga,B)N semiconductor thin film using an intentionally miscut substrate. Specifically, the method comprises intentionally miscutting a substrate, loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1−xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1−xN nucleation layer, and cooling the substrate under a nitrogen overpressure.

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US Patent 11791606 Method and system for providing directional light sources with broad spectrum
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US Patent 11788699 Fiber-delivered laser-induced dynamic light system
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Patent Inventor Names
Benjamin A. Haskell0
Dong-Seon Lee0
Hitoshi Sato0
James S. Speck0
John F. Kaeding0
Michael Iza0
Shuji Nakamura0
Steven P. DenBaars0
Troy J. Baker0
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US Patent 11749969 Laser devices using a semipolar plane
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US Patent 11715931 Strained and strain control regions in optical devices
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edited on 2 Aug, 2023
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US Patent 11715927 Manufacturable laser diodes on a large area gallium and nitrogen containing substrate
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US Patent 11710944 Manufacturable RGB laser diode source and system
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edited on 19 Jul, 2023
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US Patent 11705689 Gallium and nitrogen bearing dies with improved usage of substrate material
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