Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Date of Patent
April 13, 2010
Patent Application Number
11479399
Date Filed
June 30, 2006
Patent Citations Received
Patent Primary Examiner
Patent abstract
A method for forming a copper interconnect is described. An opening in a dielectric layer disposed on a substrate is formed. A barrier layer is formed on the opening. A seed layer is formed on the barrier layer. The seed layer includes a noble metal copper alloy, the copper having less than 50% of the atomic weight of the noble metal copper alloy.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
