Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
April 13, 2010
Patent Application Number
10580619
Date Filed
November 26, 2004
Patent Citations Received
Patent Primary Examiner
Patent abstract
A trench MOSFET with drain (8), drift region (10) body (12) and source (14). In order to improve the figure of merit for use of the MOSFET as control and sync FETs, the trench (20) is partially filled with dielectric (24) adjacent to the drift region (10) and a graded doping profile is used in the drift region (10).
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