US Patent 7696599 Trench MOSFET
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Patent abstract
A trench MOSFET with drain (8), drift region (10) body (12) and source (14). In order to improve the figure of merit for use of the MOSFET as control and sync FETs, the trench (20) is partially filled with dielectric (24) adjacent to the drift region (10) and a graded doping profile is used in the drift region (10).
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US Patent 07696599 Trench MOSFET US Patent 7696599 Trench MOSFET
Infobox
Patent Number
0769659900
Patent Number
769659900
Edits on 31 Mar, 2023
Golden AI
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Is a
Patent Jurisdiction
Patent Number
076965990
Date of Patent
April 13, 2010
0Patent Application Number
105806190
Date Filed
November 26, 2004
0Official Website
Patent Primary Examiner
0
Edits on 28 Sep, 2022
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Infobox
Is a
Patent Jurisdiction
Patent Number
076965990
Date of Patent
April 13, 2010
0Patent Application Number
105806190
Date Filed
November 26, 2004
0Official Website
Patent Primary Examiner
0
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US Patent 07696599 Trench MOSFET
Infobox
Is a
Patent jurisdiction
Patent number
07696599
Date of patent
April 13, 2010
Patent application number
10580619
Date Filed
November 26, 2004
Patent primary examiner
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