US Patent 7705403 Programmable ESD protection structure
Patent 7705403 was granted and assigned to National Semiconductor on April, 2010 by the United States Patent and Trademark Office.
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Patent abstract
In a LVTSCR or snapback NMOS ESD structure, low voltage protection as well as higher voltage protection is provided by introducing a floating gate that capacitively couples with the control gate of the ESD structure and programming the floating gate to have different charges on it as desired.
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US Patent 07705403 Programmable ESD protection structure US Patent 7705403 Programmable ESD protection structure
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Patent Number
0770540300
Patent Number
770540300
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
077054030
Date of Patent
April 27, 2010
0Patent Application Number
113244550
Date Filed
January 3, 2006
0Official Website
Patent Primary Examiner
Edits on 22 Sep, 2022
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Infobox
Is a
Current Assignee
Patent Jurisdiction
Patent Number
077054030
Date of Patent
April 27, 2010
0Patent Application Number
113244550
Date Filed
January 3, 2006
0Official Website
Patent Primary Examiner
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US Patent 07705403 Programmable ESD protection structure
Infobox
Is a
Current assignee
Patent jurisdiction
Patent number
07705403
Date of patent
April 27, 2010
Patent application number
11324455
Date Filed
January 3, 2006
Patent primary examiner
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