US Patent 7741724 Semiconductor device

This invention is directed to offer a semiconductor device having a structure capable of relaxing a mechanical stress applied to a bonding pad. A third interlayer insulation film having via holes is formed on a second interlayer insulation film to cover a third wiring layer. A third conductive layer is formed in the via hole. The third interlayer insulation film is composed of an array of a plurality of hexagonal column-shaped interlayer insulation films. And the via hole and the third conductive layer are formed to surround each hexagonal column-shaped interlayer insulation film. A fourth wiring layer connected with the third wiring layer through the third conductive layer is formed. The fourth wiring layer makes an uppermost wiring layer in an embodiment of this invention and serves as the bonding pad.