Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
June 29, 2010
Patent Application Number
11228419
Date Filed
September 15, 2005
Patent Primary Examiner
Patent abstract
A method of manufacturing a semiconductor device employs a PEALD method including using an organometallic Ta precursor to form a TaN thin film. As a result, a conformal TaN diffusion barrier may be formed at a temperature of 250° C. or higher, so that impurities are reduced and density is increased in the TaN thin film.
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