US Patent 7745348 Manufacturing method of a semiconductor device
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Patent abstract
A method of manufacturing a semiconductor device employs a PEALD method including using an organometallic Ta precursor to form a TaN thin film. As a result, a conformal TaN diffusion barrier may be formed at a temperature of 250° C. or higher, so that impurities are reduced and density is increased in the TaN thin film.
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US Patent 07745348 Manufacturing method of a semiconductor device US Patent 7745348 Manufacturing method of a semiconductor device
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Patent Number
0774534800
Patent Number
774534800
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Is a
Patent Jurisdiction
Patent Number
077453480
Date of Patent
June 29, 2010
0Patent Application Number
112284190
Date Filed
September 15, 2005
0Official Website
Patent Primary Examiner
Edits on 23 Sep, 2022
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Infobox
Is a
Patent Jurisdiction
Patent Number
077453480
Date of Patent
June 29, 2010
0Patent Application Number
112284190
Date Filed
September 15, 2005
0Official Website
Patent Primary Examiner
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US Patent 07745348 Manufacturing method of a semiconductor device
Infobox
Is a
Patent jurisdiction
Patent number
07745348
Date of patent
June 29, 2010
Patent application number
11228419
Date Filed
September 15, 2005
Patent primary examiner
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