Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Satoshi Kageyama0
Date of Patent
July 6, 2010
0Patent Application Number
122306180
Date Filed
September 2, 2008
0Patent Primary Examiner
Patent abstract
The semiconductor device according to the present invention includes: a first wire made of a material mainly composed of Cu; a second wire made of a material mainly composed of Cu; an interlayer dielectric film formed between the first wire and the second wire; a via, made of a material mainly composed of Cu, penetrating through the intermediate dielectric film to be connected to the first wire and the second wire; and a dummy via, made of a material mainly composed of Cu, smaller in via diameter than the via and connected to the first wire while not contributing to electrical connection between the first wire and the second wire.
Timeline
No Timeline data yet.
Further Resources
No Further Resources data yet.
