US Patent 7750480 Semiconductor device
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Patent abstract
The semiconductor device according to the present invention includes: a first wire made of a material mainly composed of Cu; a second wire made of a material mainly composed of Cu; an interlayer dielectric film formed between the first wire and the second wire; a via, made of a material mainly composed of Cu, penetrating through the intermediate dielectric film to be connected to the first wire and the second wire; and a dummy via, made of a material mainly composed of Cu, smaller in via diameter than the via and connected to the first wire while not contributing to electrical connection between the first wire and the second wire.
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Patent Inventor Names
Satoshi Kageyama0
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US Patent 07750480 Semiconductor device US Patent 7750480 Semiconductor device
Infobox
Patent Number
077504800
Patent Number
77504800
Edits on 27 Sep, 2022
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Patent Jurisdiction
Patent Number
077504800
Date of Patent
July 6, 2010
0Patent Application Number
122306180
Date Filed
September 2, 2008
0Official Website
Patent Primary Examiner
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US Patent 07750480 Semiconductor device
Infobox
Is a
Patent jurisdiction
Patent number
07750480
Date of patent
July 6, 2010
Patent application number
12230618
Date Filed
September 2, 2008
Patent primary examiner
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